|
|
.gif)
Refurbished Gasonics AE 2001 |
|
Manufacturer:Gasonics
Refurbished by:Allwin21 Corp
Gasonics is a Registered Trademark of Novellus Corp.AE 2001 is a single wafer downstream isotropic etch system, designed to etch thin films such as poly silicon, silicon nitride and CVD oxides.Utilizing the proven Aura downstream microwave source and a dedicated reactor chamber, GaSonicsAE2001 offers high etch rates and no RF damage to the wafer. Featuring high reliability and flexibility in process parameter, GaSonics AE 2001 is the unparalleled tool of choice for multiple applications and high capital productivity. Gaonicsa AE2001 is an electro-mechanical production system used to etch materials such as nitride, oxide poly-silicon etc. from the surface of silicon or other substrate. Each wafer is processed individually by means a chemical reaction induced by a gas plasma.
- Single Wafer, Multi-Step Processing
- Closed-Loop Temperature Control
- Pressure Control
- Accurate, closed-loop pressure control with “butterfly-style” throttle valve and capacitance manometer
- RF power: 100 to 500 watts
- Timed cycles up to 4 hour each
- No RF damage (£0.1 volt CV shift)
- High throughput
- Front and backside etching
- Excellent etch rates and uniformities
- 100mm – 150mm wafer capability
- Variable platen temperature
- Alumina (ceramic) plasma tube
- Fluorine compatible chamber
- Well-characterized process
- Multiple step process capability
- High capital productivity.
______________________________________________________________
Allwin21 Corp. can also provide advanced Equip Robot transfer wafer technology , AW Control Software and Superior Temperature Control Technology to upgrade the refurbished Gasonics AE 2001 which provides the following significant advantages.
- New hardware includes: New control Board with cable, new timer counter with watch dog, Pentium Computer with 17” LCD Monitor, standard keyboard and mouse.
- Software calibration and easy to be done.
- More functions and I/O hardware “exposed” for easier maintenance and trouble shooting.
- It is easy to edit recipe with GUI and graph display.
- Save all process data on the computer hard disk.
- A/D and D/A precision is 14 to 16 bits.
- Detect in process and with color curve displayed on the screen.
- Robot teach is on the GUI and easy to do the procedure with new concept teaching method.
- Software watch dog to eliminate machine damage duo to the computer locks up or freeze.
- Sensor status detect function.
- On line help function
|
--------------------------------------------------------------------------
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete.
If the etch is intended to make a cavity in a material, the depth of the cavity may be controlled approximately using the etching time and the known etch rate. More often, though, etching must entirely remove the top layer of a multilayer structure, without damaging the underlying or masking layers. The etching system's ability to do this depends on the ratio of etch rates in the two materials (selectivity).
Some etches undercut the masking layer and form cavities with sloping sidewalls. The distance of undercutting is called bias. Etchants with large bias are called isotropic.
Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma systems can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic.
The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Allwin21 Corp can provide the following refurbished Etcher equipment.
 
Refurbished Gasonics AE2001 Refurbished Matrix303
Allwin21 Corp. can also provide Allwin21 Corp proprietary AW Control Software and Superior Temperature Control Technology to upgrade the refurbished equipment which provides the following significant advantages
- Integrated process control system
- Real time graphics display
- Real time process data acquisition, display, and analysis
- Programmed comprehensive calibration and diagnostic functions
- Better performance and maintenance than the original systems
|
Shipping available
